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bzx85c silicon planar power zener diodes for use in stabilizing and clipping circuits with high power rating. the zener voltages are graded according to the international e 24 standard. other tolerances and higher zener voltages are upon request. absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 1.3 1) w junction temperature t j 200 o c storage temperature range t stg - 55 to + 200 o c 1) valid provided that leads at a distance of 8 mm from case ar e kept at ambient temperature. characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 130 1) k/w forward voltage at i f = 200 ma v f 1.2 v 1) valid provided that leads at a distance of 8 mm from case ar e kept at ambient temperature. max. 4.2 max. 2.8 glass case do-41 max. 0.7 min. 25.4 min. 25.4 xxx cathode band part no. st "st" brand dimensions in mm black black black 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse current v znom v zt at i zt z zt at i zt z zk at i zk i r at v r (v) (v) (ma) max. ( ? ) (ma) max. ( ? ) (ma) max. (a) (v) bzx85c3v0 3 2.8...3.2 80 20 80 400 1 100 1 bzx85c3v3 3.3 3.1...3.5 70 20 70 400 1 40 1 bzx85c3v6 3.6 3.4...3.8 60 15 60 500 1 20 1 bzx85c3v9 3.9 3.7...4.1 60 15 60 500 1 10 1 bzx85c4v3 4.3 4...4.6 50 13 50 500 1 3 1 bzx85c4v7 4.7 4.4...5 45 13 45 600 1 3 1 bzx85c5v1 5.1 4.8...5.4 45 10 45 500 1 1 1.5 bzx85c5v6 5.6 5.2...6 45 7 45 400 1 1 2 bzx85c6v2 6.2 5.8...6.6 35 4 35 300 1 1 3 bzx85c6v8 6.8 6.4...7.2 35 3.5 35 300 1 1 4 bzx85c7v5 7.5 7...7.9 35 3 35 200 0.5 1 4.5 bzx85c8v2 8.2 7.7...8.7 25 5 25 200 0.5 1 6.2 bzx85c9v1 9.1 8.5...9.6 25 5 25 200 0.5 1 6.8 bzx85c10 10 9.4...10.6 25 7 25 200 0.5 0.5 7 bzx85c11 11 10.4...11.6 20 8 20 300 0.5 0.5 8.2 bzx85c12 12 11.4...12.7 20 9 20 350 0.5 0.5 9.1 bzx85c13 13 12.4...14.1 20 10 20 400 0.5 0.5 10 bzx85c15 15 13.8...15.6 15 15 15 500 0.5 0.5 11 bzx85c16 16 15.3...17.1 15 15 15 500 0.5 0.5 12 BZX85C18 18 16.8...19.1 15 20 15 500 0.5 0.5 13 bzx85c20 20 18.8...21.2 10 24 10 600 0.5 0.5 15 bzx85c22 22 20.8...23.3 10 25 10 600 0.5 0.5 16 bzx85c24 24 22.8...25.6 10 25 10 600 0.5 0.5 18 bzx85c27 27 25.1...28.9 8 30 8 750 0.25 0.5 20 bzx85c30 30 28...32 8 30 8 1000 0.25 0.5 22 bzx85c33 33 31...35 8 35 8 1000 0.25 0.5 24 bzx85c36 36 34...38 8 40 8 1000 0.25 0.5 27 bzx85c39 39 37...41 6 50 6 1000 0.25 0.5 30 bzx85c43 43 40...46 6 50 6 1000 0.25 0.5 33 bzx85c47 47 44...50 4 90 4 1500 0.25 0.5 36 bzx85c51 51 48...54 4 115 4 1500 0.25 0.5 39 bzx85c56 56 52...60 4 120 4 2000 0.25 0.5 43 bzx85c62 62 58...66 4 125 4 2000 0.25 0.5 47 bzx85c68 68 64...72 4 130 4 2000 0.25 0.5 51 bzx85c75 75 70...79 4 135 4 2000 0.25 0.5 56 1) tested with pulses t p = 20 ms. bzx85c silicon planar power zener diodes 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
c8v2 2 breakdown characteristics at tj=constant (pulsed) 0 0 40 80 1 iz 120 160 200 240 ma 34 5 7 68 c3v9 c6v8 c5v6 c4v7 c10 12 910 vz 11 1413 c12 tj=25 c bzx 85... o 16 17 18 19 20 21 22 23 15 24v c15 c18 c22 breakdown characteristics at tj=constant (pulsed) 0 10 iz 20 30 40 ma 50 20 65 tj=25 c bzx 85... 45 35 25 30 vz 40 c27 c33 c39 55 50 60 c47 o 70 c68 75 80 85 90 95v c75 c91 w a dmissible power dissipation versus ambient temperature valid provided that leads are kept at ambient temperature at a distance of 10 mm from case t amb p tot bzx85c silicon planar power zener diodes 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech

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